On the other hand there is a huge benefit of specific InP lasers because they are eye safe. Optoelectronic terahertz is used in ultra-sensitive spectroscopic analysers, thickness measurements of polymers and for the detection of multilayer coatings in the automotive industry. On one hand there are spectroscopic applications, where a certain wavelength is needed to interact with matter to detect highly diluted gases for example. Light is also used for sensing applications. This light is used for fibre based Telecom and Datacom applications in all areas of the digitalised world. InP based lasers and LEDs can emit light in the very broad range of 1200 nm up to 12 µm. InP based components unlock this spectral range for important new applications. Electromagnetic waves in this range possess hybrid properties they show high-frequency- and optical characteristics simultaneously. There is still a vastly under-utilized, yet technically exciting zone in the electromagnetic spectrum between microwaves and infrared, often referred to as terahertz. The application fields of InP splits up into three main areas. ( April 2020) ( Learn how and when to remove this template message) Unsourced material may be challenged and removed. Please help improve this section by adding citations to reliable sources. InP is also used as a substrate for epitaxial indium gallium arsenide based opto-electronic devices. The company Infinera uses indium phosphide as its major technological material for manufacturing photonic integrated circuits for the optical telecommunications industry, to enable wavelength-division multiplexing applications. It also has a direct bandgap, making it useful for optoelectronics devices like laser diodes. It was used with indium gallium arsenide to make a record breaking pseudomorphic heterojunction bipolar transistor that could operate at 604 GHz. InP is used in high-power and high-frequency electronics because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide.
Indium phosphide can be prepared from the reaction of white phosphorus and indium iodide at 400 ☌., also by direct combination of the purified elements at high temperature and pressure, or by thermal decomposition of a mixture of a trialkyl indium compound and phosphine. Artificially colored in image post-processing. Indium phosphide nanocrystalline surface obtained by electrochemical etching and viewed under scanning electron microscope.